Intel announces tweaks to 22FFL process for RF, MRAM at IEDM18 – Part 2
Part 2 – MRAM in 22FFL The second 22FFL paper at IEDM18 [1] describes the integration of Magnetic Tunnel Junction (MTJ)-based MRAM (magnetic random-access memory) into the back-end of the process. MTJ technology is attractive for embedded non-volatile memory because of relatively low cost compared with e-flash, with comparable endurance and data retention properties. Intel’s […]
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